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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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6 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 6"

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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6 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 6"

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Price : By Case

Payment Terms : T/T

Supply Ability : 10,000 wafers/month

Delivery Time : 5-50 working days

product name : 6" Silicon Wafer

feature : Prime Grade

Dopant : Boron

Conductance type : P

other name : Prime Grade powerway wafer

Wafer Diameter : 6 inch

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6 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 6"
PAM-XIAMEN is a manufacturer of CZ and FZ silicon wafer, we now become the worldwide source for high pure silicon wafers,thermal oxide silicon and epi wafers. Silicon wafer is used for integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells and finally apply to computer, mobile, sensor and other electronics. With rich experiences , PAM-XIAMEN understand your requirements and can provide exactly the silicon products you need with the suitable quality and lowest possible price . PAM-XIAMEN can provide both standard and customized silicon wafers to meet your demands.PAM-XIAMEN offer semiconductor silicon wafer with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon wafers. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, thin film deposition and metallization on silicon wafers.

6inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 6"

TypeConduction TypeOrientationDiameter(mm)Resistivity(Ω•cm)
High resistanceN&P<100>&<111>50 - 300>1000
NTDN<100>&<111>50 - 30030-800
CFZN&P<100>&<111>50 - 3001-50
GDN&P<100>&<111>50 - 3000.001-300

ParameterUnitValue
Crystalline structure-Monocrystalline
Growth technique-FZ
Crystal Orientation-111
Conductance type-P
Dopant-Boron
Diametermm150
ResistivityΩ/cm2>1000, 30-800, 1-50, 0.001-300
Thicknessum625±15µm
1,000±25µm
875±25µm
TTVum≤10 um
BOWum≤40 um
Warpum≤40 um
(G)STIRumCustomer standard
Site Flatness-STIRumCustomer standard
Edge Exclusion ZonemmSEMI STD or Customer Request
LPD's-≥0.3μm, <30count or Customer Request
Oxygen Concentrationppma<1E16/cc
Carbon Concentrationppma<1E16/cc
RRG-≤15%
Front Surface-Polished
Back Surface-Polished or Etched
Edge Surface Condition SEMI STD or Customer Request
Primary Flat LengthmmSEMI STD
Primary Flat Orientation(100/111) & Angle(°) SEMI STD
Secondary Flat LengthmmSEMI STD
Secondary Flat Orientation(100/111) & Angle(°) SEMI STD
Laser mark-SEMI STD or Customer Request
Packaging Packaged in a class 100 clean room environment,
Heat-sealed plastic inner/aluminium foil outer bags,
Vacuum Packing
If specific requirement by customer, will adjust accordingly


What is the application of silicon wafer?
Monocrystalline silicon wafer is mainly used to make semiconductor components, its detail application: it is the raw material of semiconductor silicon device, used for making high power rectifier, high power transistor, diode, switch device, etc. Monocrystalline silicon grown by Czochralski method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate and solar cell. Zone melting single crystal is mainly used in the field of high-voltage high-power controllable rectifier devices, widely used in high-power power transmission and transformation, electric locomotive, rectifier, frequency conversion, electromechanical integration, energy-saving lamp, television and other products. Epitaxial wafer are mainly used in the field of integrated circuits

PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.















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