Sign In | Join Free | My fnxradio.com
China XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. logo
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Active Member

6 Years

Home > GaSb Wafer >

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Contact Now

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Price : By Case

Payment Terms : T/T

Supply Ability : 10,000 wafers/month

Delivery Time : 5-50 working days

product name : GaSb wafer

Conduction Type : N Type

Dopant : Tellurium

Grade : dummy grade

other name : gallium antimonide Wafer

Wafer Diameter : 3"

Contact Now

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

3" GaSb Wafer Specification

Item Specifications
Conduction Type N-type
Dopant Tellurium
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-20)x1017cm-3
Mobility 2000-3500cm2/V.s
EPD <2x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Optical properties of GaSb Wafer

Index of refraction 3.8
Radiative recombination coefficient ~ 10-10 cm3s-1

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Refractive index n versus photon energy, 300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Reflectivity versus photon energy, 300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples.
T(K): 1. 300, 2. 77, 3. 4.2
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption edge in p-type GaSb.
Na = 3·1019 cm-3;
T(K): 1. 215; 2. 140; 3. 77
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption edge at 77 K for different doping levels, p-GaSb.
Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade The absorption coefficient versus photon energy, T=300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade The impurity absorption at low photon energies, T=80 K
Undoped sample (p = 2.4·1017 cm-3 at 300 K)
Te added (p = 7.5·1016 cm-3)
Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!


Product Tags:

gallium antimonide

      

4 inch wafer

      
Wholesale N Type , High Conductive GaSb Substrate , 3”, Dummy Grade from china suppliers

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
*Subject:
*Message:
Characters Remaining: (0/3000)