4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 30nm/10nm 4"
PAM-XIAMEN is a manufacturer of CZ and FZ silicon wafer, we now become the worldwide source for high pure silicon wafers,thermal oxide silicon and epi wafers. Silicon wafer is used for integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells and finally apply to computer, mobile, sensor and other electronics. With rich experiences , PAM-XIAMEN understand your requirements and can provide exactly the silicon products you need with the suitable quality and lowest possible price . PAM-XIAMEN can provide both standard and customized silicon wafers to meet your demands.PAM-XIAMEN offer semiconductor silicon wafer with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon wafers. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, thin film deposition and metallization on silicon wafers.
4inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 30nm/10nm 4"
| Type |
Conduction Type |
Orientation |
Diameter(mm) |
Resistivity(Ω•cm) |
| CZ |
N&P |
<100><110>&<111> |
50-300 |
1-300 |
| MCZ |
N&P |
<100><110>&<111> |
50-200 |
1-300 |
| Heavy-doping |
N&P |
<100><110>&<111> |
50-200 |
0.001-1 |
| Parameter |
Unit |
Value |
| Crystalline structure |
- |
Monocrystalline |
| Growth technique |
- |
CZ |
| Crystal Orientation |
- |
100±0.5° |
| Conductance type |
- |
P or N |
| Dopant |
- |
Boron or Phosphorus |
| Diameter |
mm |
100 |
| Resistivity |
Ω/cm2 |
Any |
| Thickness |
um |
525 ± 25µm |
| TTV |
um |
≤10 um |
| BOW |
um |
≤30 um |
| (G)STIR |
um |
Customer standard |
| Site Flatness-STIR |
um |
Customer standard |
| Edge Exclusion Zone |
mm |
SEMI STD or Customer Request |
| LPD's |
- |
0.33µm, <qty30 or Customer Request |
| Oxygen Concentration |
ppma |
<1E16/cc |
| Carbon Concentration |
ppma |
<1E16/cc |
| RRG |
- |
≤15% |
| Front Surface |
- |
Polished |
| Back Surface |
- |
Polished |
| Edge Surface Condition |
|
SEMI STD or Customer Request |
| Primary Flat Length |
mm |
SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) |
|
SEMI STD |
| Secondary Flat Length |
mm |
SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) |
|
SEMI STD |
| Laser mark |
- |
SEMI STD or Customer Request |
| One side sputtering Cr/Au Layer with the thickness 30nm/10nm |
| Packaging |
|
Packaged in a class 100 clean room environment,
Heat-sealed plastic inner/aluminium foil outer bags,
Vacuum Packing |
| If specific requirement by customer, will adjust accordingly |
What is a Silicon Wafer?
Silicon wafer is the most common semiconductor and the most widely used in the electronic and technology sector, which is a key component in integrated circuits, during the growth process intentional additions of dopants can be added to the to change the purity of the silicon depending on what the purpose of it will be, boron, aluminum, nitrogen, gallium and indium are common silicon dopants. Depending on what level the silicon has been doped, the semiconductor can be considered extrinsic or degenerate. Extrinsic would be lightly to moderately doped whereas degenerate semiconductors act more as conductors because of the high levels of doping that occurs during the fabrication.
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com
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4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 30nm/10nm 4" Images
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