4H N Type SiC Crystal,4”Size -SiC Wafer Manufacturer
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
Please contact us for more information:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype |
Single Crystal 4H |
Single Crystal 6H |
| Lattice Parameters |
a=3.076 Å |
a=3.073 Å |
| |
c=10.053 Å |
c=15.117 Å |
| Stacking Sequence |
ABCB |
ABCACB |
| Band-gap |
3.26 eV |
3.03 eV |
| Density |
3.21 · 103 kg/m3 |
3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient |
4-5×10-6/K |
4-5×10-6/K |
| Refraction Index |
no = 2.719 |
no = 2.707 |
| |
ne = 2.777 |
ne = 2.755 |
| Dielectric Constant |
9.6 |
9.66 |
| Thermal Conductivity |
490 W/mK |
490 W/mK |
| Break-Down Electrical Field |
2-4 · 108 V/m |
2-4 · 108 V/m |
| Saturation Drift Velocity |
2.0 · 105 m/s |
2.0 · 105 m/s |
| Electron Mobility |
800 cm2/V·S |
400 cm2/V·S |
| hole Mobility |
115 cm2/V·S |
90 cm2/V·S |
| Mohs Hardness |
~9 |
~9 |
4H N Type SiC Crystal,4”Size
| 4" 4H Silicon Carbide |
| Item No. |
Type |
Orientation |
Thickness |
Grade |
Micropipe Density |
Surface |
Usable area |
| |
N-Type |
| S4H-100-N-SIC-350-A |
4" 4H-N |
0°/4°±0.5° |
350±25um |
A |
<10/cm2 |
P/P |
>90% |
| S4H-100-N-SIC-350-B |
4" 4H-N |
0°/4°±0.5° |
350±25um |
B |
< 30/cm2 |
P/P |
>85% |
| S4H-100-N-SIC-350-D |
4" 4H-N |
0°/4°±0.5° |
350±25um |
D |
<100/cm2 |
P/P |
>75% |
| S4H-100-N-SIC-370-L |
4" 4H-N |
0°/4°±0.5° |
370±25um |
D |
* |
L/L |
>75% |
| S4H-100-N-SIC-440-AC |
4" 4H-N |
0°/4°±0.5° |
440±25um |
D |
* |
As-cut |
>75% |
| S4H-100-N-SIC-C0510-AC-D |
4" 4H-N |
0°/4°±0.5° |
5~10mm |
D |
<100/cm2 |
As-cut |
* |
| S4H-100-N-SIC-C1015-AC-C |
4" 4H-N |
0°/4°±0.5° |
5~10mm |
C |
<50/cm2 |
As-cut |
* |
SiC Crystal Structure
SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.
SiC Optoelectronic Devices
The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics.
6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices
to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to reach
high-volume commercial sales . Because SiC’s bandgap is indirect (i.e., the conduction minimum
and valence band maximum do not coincide in crystal momentum space), luminescent recombination
is inherently inefficient . Therefore, LEDs based on SiC pn junctions were rendered quite obsolete
by the emergence of much brighter, much more efficient direct-bandgap Group III-nitride (III-N such
as GaN, and InGaN) blue LEDs . However, SiC wafers are still employed as one of the substrates
(along with sapphire) for growth of III-N layers used in high-volume manufacture of green and blue
nitride-based LEDs.
SiC has proven much more efficient at absorbing short-wavelength light, which has enabled the
realization of SiC UV-sensitive photodiodes that serve as excellent flame sensors in turbine-engine
combustion monitoring and control . The wide bandgap of 6H-SiC is useful for realizing
low photodiode dark currents as well as sensors that are blind to undesired near-infrared wavelengths
produced by heat and solar radiation. Commercial SiC-based UV flame sensors, again based on epitaxially
grown dry-etch mesa-isolated 6H-SiC pn junction diodes, have successfully reduced harmful pollution
emissions from gas-fired ground-based turbines used in electrical power generation systems . The
low dark-currents of SiC diodes are also useful for X-ray, heavy ion, and neutron detection in nuclear
reactor monitoring and enhanced scientific studies of high-energy particle collisions and cosmic
radiation .
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