4H Semi-Insulating SiC Production Grade With High Resistivity,4”Size
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype |
Single Crystal 4H |
Single Crystal 6H |
| Lattice Parameters |
a=3.076 Å |
a=3.073 Å |
| |
c=10.053 Å |
c=15.117 Å |
| Stacking Sequence |
ABCB |
ABCACB |
| Band-gap |
3.26 eV |
3.03 eV |
| Density |
3.21 · 103 kg/m3 |
3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient |
4-5×10-6/K |
4-5×10-6/K |
| Refraction Index |
no = 2.719 |
no = 2.707 |
| |
ne = 2.777 |
ne = 2.755 |
| Dielectric Constant |
9.6 |
9.66 |
| Thermal Conductivity |
490 W/mK |
490 W/mK |
| Break-Down Electrical Field |
2-4 · 108 V/m |
2-4 · 108 V/m |
| Saturation Drift Velocity |
2.0 · 105 m/s |
2.0 · 105 m/s |
| Electron Mobility |
800 cm2/V·S |
400 cm2/V·S |
| hole Mobility |
115 cm2/V·S |
90 cm2/V·S |
| Mohs Hardness |
~9 |
~9 |
4H Semi-Insulating SiC Production Grade,4”Size
| SUBSTRATE PROPERTY |
S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description |
Production Grade 4H SEMI Substrate |
| Polytype |
4H |
| Diameter |
(50.8 ± 0.38) mm |
| Thickness |
(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) |
>1E5 Ω·cm |
| Surface Roughness |
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM |
<30 arcsec <50 arcsec |
| Micropipe Density |
A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation |
| On axis <0001>± 0.5° |
| Off axis 3.5° toward <11-20>± 0.5° |
| Primary flat orientation |
Parallel {1-100} ± 5° |
| Primary flat length |
16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length |
8.00 ± 1.70 mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 90 % |
| Edge exclusion |
1 mm |
SiC crystal application
Many researchers know the general SiCapplication:III-V Nitride Deposition;OptoelectronicDevices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations.
Detail Application of Silicon Carbide
Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.
Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations:
1. SiC substrate for X-ray monochromators:such as,using SiC's large d-spacing of about 15 A;
2. SiC substrate for high voltage devices;
3. SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition;
4. For silicon carbide p-n diode;
5. SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm.
6. SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important:
1) Semi-insulating type required to prevent free carrier absorption of the laser light;
2) Double side polished are preferred;
3) Surface roughness: < 2nm, so that the surface is enough flat for bonding;
7. SiC substrate for THz system application: Normally it require THz transparency
8. SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available, surface side on C-face or Si face are both available.
9. SiC substrate for process development loke ginding, dicing and etc
10. SiC substrate for fast photo-electric switch
11. SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned.
12. SiC substrate for laser: optical, surface and stranparence are concerned.
13. SiC substrate for III-V epitaxy, normally off axis substrate are required.
Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, he can give researchers suggestions in different application
SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed in further SiC technology maturation. Throughout this section, it should become apparent to the reader that the most difficult general challenge preventing SiC electronics from fully attaining beneficial capabilities is attaining long-term high operational reliability, while operating in previously unattained temperature and power density regimes. Because many device reliability limitations can be traced to fundamental material and junction/interface issues already mentioned in Sections 5.4 and 5.5, efforts to enable useful (i.e., reliable) SiC electronics should focus on improvements to these fundamental areas.
Product Tags:
|
|
4H Semi-Insulating SiC Production Grade With High Resistivity,4”Size Images
|
