3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
Epitaxial growth of graphene on silicon carbide (SiC)
I. To fabricate and test electronic devices made from graphene on silicon carbide (SiC) substrates, it needs high-quality graphene to be processed. And to get qualified graphene, it needs qualified SiC substrate.
II. If the required wafers will be used to fabricate high-quality epitaxial graphene by annealing small sections of the wafer in Argon gas background, the quality of the wafers is critical, as are the surface finish (chemical-mechanical epitaxial grade polish) and miscut relative to the basal crystal plane of 4H-SiC(0001).
III. 100 mm diameter SiC substrates with the following technical requirements:
2. 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects
3. 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.
4. Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.
5. SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.
6. Wafer bow is less than 25 micrometers for each wafer.
Please contact us for more information:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype |
Single Crystal 4H |
Single Crystal 6H |
| Lattice Parameters |
a=3.076 Å |
a=3.073 Å |
| |
c=10.053 Å |
c=15.117 Å |
| Stacking Sequence |
ABCB |
ABCACB |
| Band-gap |
3.26 eV |
3.03 eV |
| Density |
3.21 · 103 kg/m3 |
3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient |
4-5×10-6/K |
4-5×10-6/K |
| Refraction Index |
no = 2.719 |
no = 2.707 |
| |
ne = 2.777 |
ne = 2.755 |
| Dielectric Constant |
9.6 |
9.66 |
| Thermal Conductivity |
490 W/mK |
490 W/mK |
| Break-Down Electrical Field |
2-4 · 108 V/m |
2-4 · 108 V/m |
| Saturation Drift Velocity |
2.0 · 105 m/s |
2.0 · 105 m/s |
| Electron Mobility |
800 cm2/V·S |
400 cm2/V·S |
| hole Mobility |
115 cm2/V·S |
90 cm2/V·S |
| Mohs Hardness |
~9 |
~9 |
4H Semi-Insulating SiC Wafer, Research Grade,3”Size
| SUBSTRATE PROPERTY |
S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description |
Research Grade 4H SEMI Substrate |
| Polytype |
4H |
| Diameter |
(50.8 ± 0.38) mm |
| Thickness |
(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) |
>1E5 Ω·cm |
| Surface Roughness |
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM |
<50 arcsec |
| Micropipe Density |
A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation |
| On axis <0001>± 0.5° |
| Off axis 3.5° toward <11-20>± 0.5° |
| Primary flat orientation |
Parallel {1-100} ± 5° |
| Primary flat length |
16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length |
8.00 ± 1.70 mm |
| Surface Finish |
Single or double face polished |
| Packaging |
Single wafer box or multi wafer box |
| Usable area |
≥ 90 % |
| Edge exclusion |
1 mm |
Product Tags:
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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth Images
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