(10-11) Crystal Plane Si-GaN Freestanding GaN Substrate -Powerway Wafer
PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.
Here Shows Detail Specification:
(10-11) Plane SI-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN10-11)-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 10 5to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
(10-11) Plane Si-GaN Freestanding GaN Substrate
The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.
Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride (or GaN) is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.
Zinc Blende crystal structure
| | | Remarks | Referens |
| Energy gaps, Eg | 3.28 eV | 0 K | Bougrov et al. (2001) |
| Energy gaps, Eg | 3.2 eV | 300 K |
| Electron affinity | 4.1 eV | 300 K |
| Conduction band | | | |
| Energy separation between Γ valley and X valleys EΓ | 1.4 eV | 300 K | Bougrov et al. (2001) |
| Energy separation between Γ valley and L valleys EL | 1.6 ÷ 1.9 eV | 300 K |
| Effective conduction band density of states | 1.2 x 1018 cm-3 | 300 K |
| Valence band | | |
| Energy of spin-orbital splitting Eso | 0.02 eV | 300 K |
| Effective valence band density of states | 4.1 x 1019 cm-3 | 300 K |
Band structure for Zinc Blende GaN
 | Band structure of zinc blende(cubic) GaN. Important minima of the conduction band and maxima of the valence band.
300K; Eg=3.2 eVeV; EX= 4.6 eV; EL= 4.8-5.1 eV; Eso = 0.02 eV
For details see Suzuki, Uenoyama & Yanase (1995) . |
 | Brillouin zone of the face centered cubic lattice, the Bravais lattice of the diamond and zincblende structures. |
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