P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready
PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode lasers in lower noise or higher-power applications at room temperature. in diameter up to 4 inch. Indium Arsenide ( InAs ) crystal is formed by two elements , Indium and Arsenide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs wafer is is similar to gallium arsenide and is a direct bandgap material.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
2" InAs Wafer Specification
| Item |
Specifications |
| Dopant |
Zinc |
| Conduction Type |
P-type |
| Wafer Diameter |
2" |
| Wafer Orientation |
(100)±0.5° |
| Wafer Thickness |
500±25um |
| Primary Flat Length |
16±2mm |
| Secondary Flat Length |
8±1mm |
| Carrier Concentration |
(1-10)x1017cm-3 |
| Mobility |
100-400cm2/V.s |
| EPD |
<3x104cm-2 |
| TTV |
<10um |
| BOW |
<10um |
| WARP |
<12um |
| Laser marking |
upon request |
| Suface finish |
P/E, P/P |
| Epi ready |
yes |
| Package |
Single wafer container or cassette |
What is a InAs test Wafer?
Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.
Basic Parameters at 300 K of InAs Wafer?
| Crystal structure |
Zinc Blende |
| Group of symmetry |
Td2-F43m |
| Number of atoms in 1 cm3 |
3.59·1022 |
| de Broglie electron wavelength |
400 A |
| Debye temperature |
280 K |
| Density |
5.68 g cm-3 |
| Dielectric constant (static) |
15.15 |
| Dielectric constant (high frequency) |
12.3 |
| Effective electron mass |
0.023mo |
| Effective hole masses mh |
0.41mo |
| Effective hole masses mlp |
0.026mo |
| Electron affinity |
4.9 eV |
| Lattice constant |
6.0583 A |
| Optical phonon energy |
0.030 eV |
Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
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P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready Images
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